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PD - 95349B
IRF7494PBF
HEXFET(R) Power MOSFET
Applications l High frequency DC-DC converters l Lead-Free
VDSS
150V
RDS(on) max
44m:@VGS = 10V
ID
5.2A
Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
S S S G
1
8
A A D D D D
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 100C IDM PD @TA = 25C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
150 20 5.2 3.7 42 3.0 0.02 3.0 -55 to + 150
Units
V A
c
Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and
W W/C V/ns C
h
Storage Temperature Range
Thermal Resistance
Parameter
RJL RJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount)
Typ.
Max.
20 50
Units
C/W
e
--- ---
Notes through are on page 8
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03/27/08
IRF7494PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
150 --- --- 2.5 --- --- --- --- --- 0.15 35 --- --- --- --- --- --- --- 44 4.0 10 250 100 -100 V
Conditions
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 3.1A
f
V A nA
VDS = VGS, ID = 250A VDS = 120V, VGS = 0V VDS = 120V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V
Dynamic @ TJ = 25C (unless otherwise specified)
Parameter
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
12 --- --- --- --- --- --- --- --- --- --- --- --- --- --- 36 7.5 13 15 13 36 14 1750 220 100 870 120 170 --- 54 --- --- --- --- --- --- --- --- --- --- --- --- pF ns S nC ID = 3.1A VDS = 75V VGS = 10V VDD = 75V ID = 3.1A RG = 6.5 VGS = 10V VGS = 0V
Conditions
VDS = 50V, ID = 5.2A
f f
VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 120V, = 1.0MHz VGS = 0V, VDS = 0V to 120V
g
Avalanche Characteristics
EAS IAR Parameter Single Pulse Avalanche Energyd Avalanche CurrentA Typ. --- --- Max. 370 3.1 Units mJ A
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 55 140 2.7 A 42 1.3 --- --- V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 3.1A, VGS = 0V TJ = 25C, IF = 3.1A, VDD = 25V di/dt = 100A/s
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF7494PBF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRF7494PBF
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7494PBF
VDS VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
RD
D.U.T.
+
-V DD
Fig 10a. Switching Time Test Circuit
VDS 90%
Fig 9. Maximum Drain Current vs. Ambient Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100
Thermal Response ( Z thJA ) C/W
D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.1 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.1 1 10 100
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF7494PBF
Fig 12. On-Resistance vs. Drain Current
Fig 13. On-Resistance vs. Gate Voltage
L DUT
0
VCC
VGS
QGS VG
QG QGD
1K
Charge
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
15V
V(BR)DSS tp
VDS L
DRIVER
RG
20V
D.U.T
IAS
+ V - DD
A
I AS
tp
0.01
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy vs. Drain Current
6
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IRF7494PBF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF7494PBF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 77mH, RG = 25, IAS = 3.1A. When mounted on 1 inch square copper board, t 10 sec.
Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
ISD 3.1A, di/dt 270A/s, VDD V(BR)DSS, TJ 175C.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/08
8
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